We postulate wide-band-gap forms of carbon that locally have a planar bonding configuration as in graphite and, in contrast to diamond, are promising candidates for n-type doping by nitrogen. The presence of localized π bonds makes them as stable as fullerene C60 and causes large band gaps of ≈3 eV to appear. The allotropes accept both nitrogen and boron as substitutional dopants, making them potentially extremely useful for high-power, high-temperature, and high-speed device applications.

http://dx.doi.org/10.1103/PhysRevB.57.R661