Jungnickel, G., P. K. Sitch, et al. (1998). "Nitrogen doping in purely sp2 bonded forms of carbon." Physical Review B - Condensed Matter and Materials Physics 57(2): R661-R665.

We postulate wide-band-gap forms of carbon that locally have a planar bonding configuration as in graphite and, in contrast to diamond, are promising candidates for n-type doping by nitrogen. The presence of localized π bonds makes them as stable as fullerene C60 and causes large band gaps of ≈3 eV to appear. The allotropes accept both nitrogen and boron as substitutional dopants, making them potentially extremely useful for high-power, high-temperature, and high-speed device applications.